Description

Wolfspeed, Inc. stands as a key innovator in wide bandgap semiconductor technology, focusing on silicon carbide (SiC) and gallium nitride (GaN). The company engineers and produces a diverse array of advanced materials, power components, and radio frequency (RF) devices. Its materials portfolio encompasses bare and epitaxial silicon carbide wafers, alongside gallium nitride epitaxial layers grown on silicon carbide substrates. These SiC materials are provided to clients who integrate them into their own RF, power, and other product manufacturing processes. For power applications, Wolfspeed delivers an extensive selection of devices, including silicon carbide Schottky diodes, metal-oxide-semiconductor field-effect transistors (MOSFETs), power modules, and gate driver boards. These components are essential for demanding uses such as electric vehicle (EV) charging infrastructure, server power supplies, solar inverters, uninterruptible power supplies (UPS), and various industrial power systems. In the RF sector, Wolfspeed's offerings include GaN-based dies, high-electron mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), and laterally diffused MOSFET (LDMOSFET) power transistors. These are critical enablers for telecommunications infrastructure, a variety of military systems, and other commercial applications. Beyond these specific categories, Wolfspeed's technologies are fundamental to numerous industries, including transportation, rapid charging, wireless communication systems (such as 5G), motor control, renewable energy generation and storage, and aerospace and defense. Notably, its materials and RF devices play a significant role in military communications, radar systems, satellite technology, and general telecommunications. With a global presence, Wolfspeed serves clients across North America, Asia, and Europe. Founded in Durham, North Carolina, in 1987, the company operated under the name Cree, Inc. until its strategic rebranding to Wolfspeed, Inc. in October 2021.